EARLY STAGES OF GAAS-GE(110) INTERFACE FORMATION

被引：26

作者：

MUNOZ, A

SANCHEZDEHESA, J

FLORES, F

机构：

来源：

EUROPHYSICS LETTERS | 1986年 / 2卷 / 05期

关键词：

D O I：

10.1209/0295-5075/2/5/007

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：385 / 391

页数：7

共 16 条

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SOLID-STATE ELECTRONICS, 1983, 26 (06) :499-513

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[9] CHEMISORPTION-INDUCED DEFECTS ON GAAS(110) SURFACES [J].

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[10]

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