MEASUREMENT OF 1.3 AND 1.55 MU-M GAIN-SWITCHED SEMICONDUCTOR-LASER PULSES WITH A PICOSECOND IR STREAK CAMERA AND A HIGH-SPEED INGAAS PIN PHOTODIODE

被引：12
作者：
LIN, C
BOWERS, JE
机构：
来源：
ELECTRONICS LETTERS | 1985年 / 21卷 / 25-2期
关键词：
D O I：
10.1049/el:19850847
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：1200 / 1202
页数：3
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