共 14 条
[4]
EASTMAN DE, 1980, PHYS REV LETT, V45, P656, DOI 10.1103/PhysRevLett.45.656
[6]
MODELING A HETEROGENEOUS METAL-SEMICONDUCTOR INTERFACE - CE ON SI(111)
[J].
PHYSICAL REVIEW B,
1984, 30 (12)
:7370-7373
[7]
GRIONI M, UNPUB PHYS REV B
[9]
THE OXIDATION OF GAAS(110) - A REEVALUATION
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1984, 2 (03)
:351-358
[10]
SCHOTTKY-BARRIER FORMATION OF AG ON GAAS(110)
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1983, 1 (03)
:581-587