MODELING OF INTERFACE REACTION-PRODUCTS WITH HIGH-RESOLUTION CORE-LEVEL PHOTOEMISSION

被引:10
作者
GRIONI, M
DELGIUDICE, M
JOYCE, JJ
WEAVER, JH
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 03期
关键词
D O I
10.1116/1.573346
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
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页码:907 / 910
页数:4
相关论文
共 14 条
[1]   CORE-LEVEL BINDING-ENERGY SHIFTS DUE TO RECONSTRUCTION ON THE SI(111) 2X1 SURFACE [J].
BRENNAN, S ;
STOHR, J ;
JAEGER, R ;
ROWE, JE .
PHYSICAL REVIEW LETTERS, 1980, 45 (17) :1414-1418
[2]   THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].
Brillson, L. J. .
SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326
[3]   ABRUPTNESS OF SEMICONDUCTOR-METAL INTERFACES [J].
BRILLSON, LJ ;
BRUCKER, CF ;
STOFFEL, NG ;
KATNANI, AD ;
MARGARITONDO, G .
PHYSICAL REVIEW LETTERS, 1981, 46 (13) :838-841
[4]  
EASTMAN DE, 1980, PHYS REV LETT, V45, P656, DOI 10.1103/PhysRevLett.45.656
[5]   CLUSTER-INDUCED REACTIONS AT A METAL-SEMICONDUCTOR INTERFACE - CE ON SI(111) [J].
GRIONI, M ;
JOYCE, J ;
CHAMBERS, SA ;
ONEILL, DG ;
DELGIUDICE, M ;
WEAVER, JH .
PHYSICAL REVIEW LETTERS, 1984, 53 (24) :2331-2334
[6]   MODELING A HETEROGENEOUS METAL-SEMICONDUCTOR INTERFACE - CE ON SI(111) [J].
GRIONI, M ;
JOYCE, J ;
DELGIUDICE, M ;
ONEILL, DG ;
WEAVER, JH .
PHYSICAL REVIEW B, 1984, 30 (12) :7370-7373
[7]  
GRIONI M, UNPUB PHYS REV B
[8]   GEOMETRY-DEPENDENT SI(2P) SURFACE CORE-LEVEL EXCITATIONS FOR SI(111) AND SI(100) SURFACES [J].
HIMPSEL, FJ ;
HEIMANN, P ;
CHIANG, TC ;
EASTMAN, DE .
PHYSICAL REVIEW LETTERS, 1980, 45 (13) :1112-1115
[9]   THE OXIDATION OF GAAS(110) - A REEVALUATION [J].
LANDGREN, G ;
LUDEKE, R ;
JUGNET, Y ;
MORAR, JF ;
HIMPSEL, FJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :351-358
[10]   SCHOTTKY-BARRIER FORMATION OF AG ON GAAS(110) [J].
LUDEKE, R ;
CHIANG, TC ;
MILLER, T .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :581-587