DIFFUSION OF NITROGEN IN ALPHA-TI

被引：66

作者：

ANTTILA, A

RAISANEN, J

KEINONEN, J

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 06期

关键词：

D O I：

10.1063/1.93981

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：498 / 500

页数：3

共 17 条

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[2] RANGES OF SOME LIGHT-IONS MEASURED BY (P, GAMMA) RESONANCE BROADENING [J].

ANTTILA, A ;

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FONTELL, A ;

WINTERBON, KB .

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[3] TRAPPING OF NITROGEN IN MO DUE TO DEFECTS GENERATED BY 50-400-KEV H+ AND HE+-IONS [J].

ANTTILA, A ;

HIRVONEN, J ;

HAUTALA, M .

PHYSICAL REVIEW B, 1981, 23 (04) :1802-1808

[4] RADIATION ENHANCED OUTDIFFUSION DURING ION-IMPLANTATION [J].

ANTTILA, A ;

HAUTALA, M .

APPLIED PHYSICS, 1979, 19 (02) :199-203

[5]

ANTTILA A, 1976, THIN SOLID FILMS, V33, P113

[6]

DOUGLAS DL, 1971, METALLURGY ZIRCONI S, P275

[7] Self-Diffusion of Ti, Zr, and Hf in their HCP Phases, and Diffusion of Nb-95 in HCP Zr [J].

Dyment, F. ;

Libanati, C. M. .

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[8]

EREMEEV VS, 1969, IZV AKAD NAUK SSSR M, V4, P262

[9]

HAUTALA M, 1982, J NUCL MATER, V105, P172, DOI 10.1016/0022-3115(82)90371-3

[10] SELF-DIFFUSION IN SILICON AS PROBED BY THE (P,GAMMA) RESONANCE BROADENING METHOD [J].

HIRVONEN, J ;

ANTTILA, A .

APPLIED PHYSICS LETTERS, 1979, 35 (09) :703-705

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