NOISE CHARACTERISTICS OF GALLIUM-ARSENIDE FIELD-EFFECT TRANSISTORS

被引：115
作者：
STATZ, H
HAUS, HA
PUCEL, RA
机构：
[1] RAYTHEON CO, RES DIV, MICROWAVE SEMICOND DEVICES PROGRAM, WALTHAM, MA 02154 USA
[2] RAYTHEON CO, MICROWAVE & POWER TUBE DIV, MICROWAVE TRANSISTOR GRP, WALTHAM, MA 02154 USA
[3] MIT, ELECT ENGN DEPT, CAMBRIDGE, MA USA
[4] MIT, RES LAB ELECTR, CAMBRIDGE, MA USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1974年 / ED21卷 / 09期
关键词：
D O I：
10.1109/T-ED.1974.17966
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：549 / 562
页数：14
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