DUAL ARSENIC AND BORON ION-IMPLANTATION IN SILICON

被引：5

作者：

YOKOTA, K

OKAMOTO, Y

MIYASHITA, F

HIRAO, T

WATANABE, M

SEKINE, K

ANDO, Y

MATSUDA, K

机构：

[1] MATSUSHITA ELECT IND CO LTD,CENT RES LAB,MORIGUCHI,OSAKA 570,JAPAN

[2] ION ENGN RES INST CO,HIRAKATA,OSAKA 57301,JAPAN

[3] NISSHIN ELECT CO LTD,UKYO KU,KYOTO 615,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 11期

关键词：

D O I：

10.1063/1.356659

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Arsenic (As) and boron (B) ions were implanted into silicon (Si) at energies such that their projected ranges coincided. The implanted Si was annealed in argon gas at a temperature of 950-degrees-C for 30 or 300 min. The activation efficiency of the implanted As atoms decreased with an increase in the implant dose of the B ions, and the diffusivity of the As atoms decreased. On the other hand, the diffusivity of the B atoms decreased with an increase in annealing time.

引用

页码：7247 / 7251

页数：5

共 18 条

[1] INTERSTITIAL INTERACTIONS - ARSENIC-ALUMINUM, PHOSPHORUS-ALUMINUM PUSH EFFECT [J].