GROWTH AND CHARACTERIZATION OF MOLECULAR-BEAM EPITAXIAL GAAS-LAYERS ON POROUS SILICON

被引：41

作者：

LIN, TL

SADWICK, L

WANG, KL

KAO, YC

HULL, R

NIEH, CW

JAMIESON, DN

LIU, JK

机构：

[1] UNIV CALIF LOS ANGELES,DEPT ELECT ENGN,DEVICE RES LAB,LOS ANGELES,CA 90024

[2] HEWLETT PACKARD CO,RES LAB,PALO ALTO,CA 94304

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 11期

关键词：

D O I：

10.1063/1.98821

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：814 / 816

页数：3

共 11 条

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[2]

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[3]

CHOI HK, 1986, IEEE ELECTRON DEVICE, V7, P271

[4]

FISHER R, 1986, APPL PHYS LETT, V48, P1223, DOI DOI 10.1063/1.96988

[5]

GRUNTHANER PJ, UNPUB

[6] LOW-TEMPERATURE SURFACE CLEANING OF SILICON AND ITS APPLICATION TO SILICON MBE [J].

ISHIZAKA, A ;

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[7]

LIN TL, 1987, APPL PHYS LETT, V49, P1104

[8] NEW APPROACH TO THE HIGH-QUALITY EPITAXIAL-GROWTH OF LATTICE-MISMATCHED MATERIALS [J].

LURYI, S ;

SUHIR, E .

APPLIED PHYSICS LETTERS, 1986, 49 (03) :140-142

[9] OPTICAL-PROPERTIES OF GAAS ON (100) SI USING MOLECULAR-BEAM EPITAXY [J].

MASSELINK, WT ;

HENDERSON, T ;

KLEM, J ;

FISCHER, R ;

PEARAH, P ;

MORKOC, H ;

HAFICH, M ;

WANG, PD ;

ROBINSON, GY .

APPLIED PHYSICS LETTERS, 1984, 45 (12) :1309-1311

[10] METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS FABRICATED IN GAAS-LAYERS GROWN DIRECTLY ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

METZE, GM ;

CHOI, HK ;

TSAUR, BY .

APPLIED PHYSICS LETTERS, 1984, 45 (10) :1107-1109

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