GROWTH AND CHARACTERIZATION OF MOLECULAR-BEAM EPITAXIAL GAAS-LAYERS ON POROUS SILICON

被引：41
|
作者：
LIN, TL
SADWICK, L
WANG, KL
KAO, YC
HULL, R
NIEH, CW
JAMIESON, DN
LIU, JK
机构：
[1] UNIV CALIF LOS ANGELES,DEPT ELECT ENGN,DEVICE RES LAB,LOS ANGELES,CA 90024
[2] HEWLETT PACKARD CO,RES LAB,PALO ALTO,CA 94304
来源：
APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 11期
关键词：
D O I：
10.1063/1.98821
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：814 / 816
页数：3
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