RESONANT RAMAN-STUDY ON CRYSTALLINE GESE2 IN RELATION TO AMORPHOUS STATES

被引：26
作者：
MATSUDA, O
INOUE, K
MURASE, K
机构：
[1] Department of Physics, Faculty of Science, Osaka University, Toyonaka, 560
来源：
SOLID STATE COMMUNICATIONS | 1990年 / 75卷 / 04期
关键词：
D O I：
10.1016/0038-1098(90)90901-M
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Raman spectra of single crystalline GeSe2 have been studied with various excitation photon energies from 2.0 to 2.8eV. In the most spectra, the intensity of the 211cm-1 band is dominant as usual. It is found that, by a 2.71eV(4579 A ̊) excitation in the c(a,a) c ̄ configuration, the 216cm-1 band becomes stronger than the 211cm-1 band. The change of the intensity ratio of the two bands is explained by a model of resonant effect between an exciton transition at about 2.7eV and the 216cm-1 vibrational excitation which is assigned to quasi-localized mode of edge-sharing Ge2Se 8 2 bitetrahedra. The crystalline 216cm-1 band is related to the A1 companion band at 216cm-1 in amorphous states. It is concluded that there is a medium range order of topologically layer-like crystalline fragments including the edge-sharing Ge2Se 8 2 bi-tetrahedra. © 1990.
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页码：303 / 308
页数：6
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