SURFACE RECOMBINATION AT SEMICONDUCTOR ELECTRODES .2. PHOTOINDUCED NEAR-SURFACE RECOMBINATION CENTERS IN P-GAP

被引：86
作者：
LI, J
PEAT, R
PETER, LM
机构：
来源：
JOURNAL OF ELECTROANALYTICAL CHEMISTRY | 1984年 / 165卷 / 1-2期
关键词：
D O I：
10.1016/S0022-0728(84)80085-6
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
引用
收藏
页码：41 / 59
页数：19
相关论文
共 29 条
[1]   TRANSIENT PHOTOCURRENTS AT PASSIVE IRON ELECTRODES [J].
ABRANTES, LM ;
PETER, LM .
JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1983, 150 (1-2) :593-601
[2]   THE TRANSPORT AND KINETICS OF MINORITY-CARRIERS IN ILLUMINATED SEMICONDUCTOR ELECTRODES [J].
ALBERY, WJ ;
BARTLETT, PN ;
HAMNETT, A ;
DAREEDWARDS, MP .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (07) :1492-1501
[3]   THE PHOTO-ELECTROCHEMICAL KINETICS OF P-TYPE GAP [J].
ALBERY, WJ ;
BARTLETT, PN .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (10) :2254-2261
[4]   PHOTOEXCITATION AND LUMINESCENCE IN REDOX PROCESSES ON GALLIUM PHOSPHIDE ELECTRODES [J].
BECKMANN, KH ;
MEMMING, R .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (03) :368-&
[5]   RATE OF PHOTOELECTROCHEMICAL GENERATION OF HYDROGEN AT P-TYPE SEMICONDUCTORS [J].
BOCKRIS, JOM ;
UOSAKI, K .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (09) :1348-1355
[6]   PHOTOELECTROLYSIS AND PHYSICAL-PROPERTIES OF SEMICONDUCTING ELECTRODE WO3 [J].
BUTLER, MA .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (05) :1914-1920
[7]   P-TYPE GAP AS A SEMICONDUCTING PHOTOELECTRODE [J].
BUTLER, MA ;
GINLEY, DS .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (06) :1273-1278
[8]   CHEMICALLY-INDUCED INTERFACE STATES IN PHOTO-ELECTROCHEMICAL CELLS [J].
BUTLER, MA ;
GINLEY, DS .
APPLIED PHYSICS LETTERS, 1983, 42 (07) :582-584
[9]   ELECTROCHEMICAL LIGHT-EMITTING-DIODES [J].
BUTLER, MA ;
GINLEY, DS .
APPLIED PHYSICS LETTERS, 1980, 36 (10) :845-847
[10]   SURFACE-TREATMENT INDUCED SUB-BAND GAP PHOTORESPONSE OF GAP PHOTOELECTRODES [J].
BUTLER, MA ;
GINLEY, DS .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) :712-714
123