TIN AND ZINC DIFFUSION INTO GALLIUM ARSENIDE FROM DOPED SILICON DIOXIDE LAYERS

被引：16
作者：
VONMUENCH, W
机构：
来源：
SOLID-STATE ELECTRONICS | 1966年 / 9卷 / 06期
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D O I：
10.1016/0038-1101(66)90005-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：619 / +
页数：1
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[4]   DOPED ANODIC OXIDE FILMS FOR DEVICE FABRICATION IN SILICON .2. DIFFUSION SOURCES OF CONTROLLED COMPOSITION AND DIFFUSION RESULTS [J].
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