A FAST WRITE LOW-VOLTAGE NON-VOLATILE RAM

被引：0
|
作者：
HAKEN, RA [1 ]
FEGER, WE [1 ]
COLEMAN, DJ [1 ]
机构：
[1] TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 11期
关键词：
D O I：
10.1109/T-ED.1983.21354
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1574 / 1574
页数：1
相关论文
共 50 条
  • [41] Review and future prospects of low-voltage RAM circuits
    Nakagome, Y
    Horiguchi, M
    Kawahara, T
    Itoh, K
    IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 2003, 47 (5-6) : 525 - 552
  • [42] A low leakage non-volatile memory voltage pulse generator for RFID applications
    Bucci, Marco
    Luzzi, Raimondo
    Vargas, Santos Torres
    2008 IEEE WORKSHOP ON DESIGN AND DIAGNOSTICS OF ELECTRONIC CIRCUITS AND SYSTEMS, PROCEEDINGS, 2008, : 231 - +
  • [43] Trends in low-voltage embedded-RAM technology
    Itoh, K
    2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, 2002, : 497 - 501
  • [44] Ultra-fast non-volatile memory
    Thomas Szkopek
    Nature Nanotechnology, 2021, 16 : 853 - 854
  • [45] Lead based ferroelectric capacitors for low voltage non-volatile memory applications
    Univ of Maryland, College Park, United States
    Integr Ferroelectr, 1-4 (159-177):
  • [46] Review and future prospects of low-voltage RAM circuits
    Nakagome, Y. (nakagome.yoshinobu@renesas.com), 1600, IBM Corporation (47): : 5 - 6
  • [47] A current-mode sense amplifier for low voltage non-volatile memories
    Calligaro, C
    Rolandi, P
    Telecco, N
    Torelli, G
    EIGHTH ANNUAL IEEE INTERNATIONAL CONFERENCE ON INNOVATIVE SYSTEMS IN SILICON, 1996 PROCEEDINGS, 1996, : 141 - 147
  • [48] Lead based ferroelectric capacitors for low voltage non-volatile memory applications
    Aggarwal, S
    Prakash, AS
    Song, TK
    Sadashivan, S
    Dhote, AM
    Yang, B
    Ramesh, R
    Kisler, Y
    Bernacki, SE
    INTEGRATED FERROELECTRICS, 1998, 19 (1-4) : 159 - 177
  • [49] Ultra-fast non-volatile memory
    Szkopek, Thomas
    NATURE NANOTECHNOLOGY, 2021, 16 (08) : 853 - 854
  • [50] Fundamental Mechanism Behind Volatile and Non-Volatile Switching in Metallic Conducting Bridge RAM
    Shukla, Nikhil
    Ghosh, Ram Krishna
    Grisafe, Benjamin
    Datta, Suman
    2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2017,
12345