A FAST WRITE LOW-VOLTAGE NON-VOLATILE RAM

被引：0
|
作者：
HAKEN, RA [1 ]
FEGER, WE [1 ]
COLEMAN, DJ [1 ]
机构：
[1] TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 11期
关键词：
D O I：
10.1109/T-ED.1983.21354
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1574 / 1574
页数：1
相关论文
共 50 条
  • [1] Demonstration of a Fast, Low-voltage, III-V Semiconductor, Non-volatile Memory
    Lane, Dominic
    Hodgson, Peter
    Potter, Richard
    Hayne, Manus
    2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM), 2021,
  • [2] Ferroelectric non-volatile memories for low-voltage, low-power applications
    Jones, RE
    Maniar, PD
    Moazzami, R
    Zurcher, P
    Witowski, JZ
    Lii, YT
    Chu, P
    Gillespie, SJ
    THIN SOLID FILMS, 1995, 270 (1-2) : 584 - 588
  • [3] NON-VOLATILE RAM MODULE
    EWINS, AJ
    WIRELESS WORLD, 1983, 89 (1571): : 41 - 41
  • [4] Ultra-thin PZT films for low-voltage ferroelectric non-volatile memories
    Wouters, D.J.
    Norga, G.J.
    Maes, H.E.
    Materials Research Society Symposium - Proceedings, 1999, 541 : 381 - 391
  • [5] Ultra-thin PZT films for low-voltage ferroelectric non-volatile memories
    Wouters, DJ
    Norga, GJ
    Maes, HE
    FERROELECTRIC THIN FILMS VII, 1999, 541 : 381 - 391
  • [6] A non-volatile organic electrochemical device as a low-voltage artificial synapse for neuromorphic computing
    Yoeri van de Burgt
    Ewout Lubberman
    Elliot J. Fuller
    Scott T. Keene
    Grégorio C. Faria
    Sapan Agarwal
    Matthew J. Marinella
    A. Alec Talin
    Alberto Salleo
    Nature Materials, 2017, 16 (4) : 414 - 418
  • [7] A non-volatile organic electrochemical device as a low-voltage artificial synapse for neuromorphic computing
    van de Burgt, Yoeri
    Lubberman, Ewout
    Fuller, Elliot J.
    Keene, Scott T.
    Faria, Gregorio C.
    Agarwal, Sapan
    Marinella, Matthew J.
    Talin, A. Alec
    Salleo, Alberto
    NATURE MATERIALS, 2017, 16 (04) : 414 - +
  • [8] ELECTRICALLY ERASABLE MEMORY BEHAVES LIKE A FAST, NON-VOLATILE RAM
    WALLACE, C
    ELECTRONICS, 1979, 52 (10): : 128 - 131
  • [9] 1K-BIT NON-VOLATILE SEMICONDUCTOR READ-WRITE RAM
    UCHIDA, Y
    SAITO, S
    NAKANE, M
    ENDO, N
    MATSUO, T
    NISHI, Y
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (08) : 1066 - 1070
  • [10] Fast Write Operations in Non-Volatile Memories Using Latency Masking
    Hoseinghorban, Ali
    Bazzaz, Mostafa
    Ejlali, Alireza
    2018 CSI INTERNATIONAL SYMPOSIUM ON REAL-TIME AND EMBEDDED SYSTEMS AND TECHNOLOGIES (RTEST), 2018, : 1 - 7
12345