22 GHZ 1/4 FREQUENCY-DIVIDER USING ALGAAS/GAAS HBTS

被引：21

作者：

YAMAUCHI, Y

NAGATA, K

NAKAJIMA, O

ITO, H

NITTONO, T

ISHIBASHI, T

机构：

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 17期

关键词：

D O I：

10.1049/el:19870623

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：881 / 882

页数：2

共 8 条

[1] AIGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR CIRCUITS WITH IMPROVED HIGH-SPEED PERFORMANCE [J].

CHANG, MF ;

ASBECK, PM ;

WANG, KC ;

SULLIVAN, GJ ;

MILLER, DL .

ELECTRONICS LETTERS, 1986, 22 (22) :1173-1174

[2] HIGH-SPEED FREQUENCY-DIVIDERS USING SELF-ALIGNED ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

ISHIBASHI, T ;

YAMAUCHI, Y ;

NAKAJIMA, O ;

NAGATA, K ;

ITO, H .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (05) :194-196

[3]

JENSEN JF, 1986, DEC IEDM, P476

[4] IMPROVED ALGAAS/GAAS HBT PERFORMANCE BY INGAAS EMITTER CAP LAYER [J].

NAGATA, K ;

NAKAJIMA, O ;

NITTONO, T ;

ITO, H ;

ISHIBASHI, T .

ELECTRONICS LETTERS, 1987, 23 (11) :566-568

[5]

Nakajima O., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P266

[6]

SAKAI T, 1985, DEC P IEDM WASH, P18

[7] ELECTRON VELOCITY OVERSHOOT IN THE COLLECTOR DEPLETION LAYER OF ALGAAS/GAAS HBTS [J].

YAMAUCHI, Y ;

ISHIBASHI, T .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (12) :655-657

[8]

YAMAUCHI Y, 1986, T IECE JPN E, V67, P286

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