MOBILIZATION OF SODIUM IN SIO2-FILMS BY ION-BOMBARDMENT

被引:44
作者
KUSHNER, RA [1 ]
MCCAUGHAN, DV [1 ]
MURPHY, VT [1 ]
HEILIG, JA [1 ]
机构
[1] BELL TEL LABS INC, MURRAY HILL, NJ 07676 USA
关键词
D O I
10.1103/PhysRevB.10.2632
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:2632 / 2641
页数:10
相关论文
共 23 条
[1]  
BALL DJ, 1971, 5 INT C SOL SURF BOS
[2]  
BAXTER RD, 1971, BATELLE MEMORIAL I R
[3]   DEPTH PROFILES OF ALUMINUM AND SODIUM NEAR SURFACES - NUCLEAR-RESONANCE METHOD [J].
DUNNING, KL ;
HUBLER, GK ;
COMAS, J ;
LUCKE, WH ;
HUGHES, HL .
THIN SOLID FILMS, 1973, 19 (01) :145-156
[4]   SURFACE COMPOSITION ANALYSIS BY BINARY SCATTERING OF NOBLE GAS IONS [J].
GOFF, RF ;
SMITH, DP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1970, 7 (01) :72-+
[5]   THEORY OF AUGER EJECTION OF ELECTRONS FROM METALS BY IONS [J].
HAGSTRUM, HD .
PHYSICAL REVIEW, 1954, 96 (02) :336-365
[6]   THEORY OF AUGER NEUTRALIZATION OF IONS AT SURFACE OF A DIAMOND-TYPE SEMICONDUCTOR [J].
HAGSTRUM, HD .
PHYSICAL REVIEW, 1961, 122 (01) :83-+
[7]   EFFECT OF BOMBARDMENT BY GLASS-FORMING IONS ON THERMALLY STIMULATED IONIC-CONDUCTIVITY OF SODIUM IN SIO2 [J].
HICKMOTT, TW .
PHYSICAL REVIEW LETTERS, 1974, 32 (02) :65-67
[8]   DEPENDENCE OF MOS DEVICE RADIATION-SENSITIVITY ON OXIDE IMPURITIES [J].
HUGHES, HL ;
BAXTER, RD ;
PHILLIPS, B .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1972, NS19 (06) :256-263
[9]  
KERR DR, 1970, RELIABILITY S LAS VE
[10]  
KERR DR, 1970, PRIVATE COMMUNICATIO