A NEW VERTICAL IGBT STRUCTURE WITH A MONOLITHIC OVER-CURRENT, OVER-VOLTAGE, AND OVER-TEMPERATURE SENSING AND PROTECTING CIRCUIT

被引：19

作者：

IWAMURO, N

HARADA, Y

YAMAZAKI, T

KUMAGAI, N

SEKI, Y

机构：

[1] Fuji Electric Corporate R&D Ltd., Advanced Device Technology Laboratory, Nagano

来源：

IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 09期

关键词：

D O I：

10.1109/55.406801

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new 600 V vertical Insulated Gate Bipolar Transistor (IGBT) structure with monolithically integrated over-current, over-voltage, and over-temperature sensing and protecting functions has been developed to exploit an extremely excellent tradeoff characteristic between an on-state voltage drop and a turn-off time for the first time. This device can be easily made by the conventional IGBT fabrication process, An accurate and a realtime device temperature detection, as well as a high withstand capability against over-current and over-voltage conditions (short circuit immunity of 30 mu sec, clamped collector voltage of 640 V), have been achieved, Furthermore, an excellent trade-off characteristic of 1.40 V as an on-state voltage drop and of 0.18 mu sec as a fall time is also obtained.

引用

页码：399 / 401

页数：3

共 8 条

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[5]

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[7]

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[8]

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