SILICON LAYERS GROWN BY DIFFERENTIAL MOLECULAR-BEAM EPITAXY

被引：19

作者：

HERZOG, HJ

KASPER, E

机构：

[1] AEG-Telefunken Forschungsinstitut, Ulm, West Ger, AEG-Telefunken Forschungsinstitut, Ulm, West Ger

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 09期

关键词：

D O I：

10.1149/1.2114325

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

SEMICONDUCTING SILICON

引用

页码：2227 / 2231

页数：5

共 18 条

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[9] ELASTIC STRAIN AND MISFIT DISLOCATION DENSITY IN SI0.92GE0.08 FILMS ON SILICON SUBSTRATES [J].

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