SILICON LAYERS GROWN BY DIFFERENTIAL MOLECULAR-BEAM EPITAXY

[1] ALLEN FG, 1982, P SPIE TECHNICAL S L, P2

[2] RECENT DEVELOPMENTS IN SILICON MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 540 - 545

[3] PATTERNED SILICON MOLECULAR-BEAM EPITAXY WITH SUB-MICRON LATERAL RESOLUTION [J]. APPLIED PHYSICS LETTERS, 1982, 41 (08) : 752 - 755

[4] CHEMICAL VAPOR-DEPOSITION APPLICATIONS IN MICROELECTRONICS PROCESSING [J]. THIN SOLID FILMS, 1981, 83 (02) : 173 - 186

[5] CALCULATION OF STRESS IN ELECTRODEPOSITS FROM THE CURVATURE OF A PLATED STRIP [J]. JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS, 1949, 42 (02): : 105 - 123

[6] DEJONG T, 1983, THESIS U AMSTERDAM

[7] Ishizaka A., 1982, Molecular Beam Epitaxy and Clean Surface Techniques. Collected Papers of 2nd International Symposium, P183

[8] KASPER E, 1982, APPL PHYS A-MATER, V28, P129, DOI 10.1007/BF00617144

[9] ELASTIC STRAIN AND MISFIT DISLOCATION DENSITY IN SI0.92GE0.08 FILMS ON SILICON SUBSTRATES [J]. THIN SOLID FILMS, 1977, 44 (03) : 357 - 370

[10] KASPER E, 1984, ELECTROCHEMICAL SOC, P429

[1] ALLEN FG, 1982, P SPIE TECHNICAL S L, P2

[2] RECENT DEVELOPMENTS IN SILICON MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 540 - 545

[3] PATTERNED SILICON MOLECULAR-BEAM EPITAXY WITH SUB-MICRON LATERAL RESOLUTION [J]. APPLIED PHYSICS LETTERS, 1982, 41 (08) : 752 - 755

[4] CHEMICAL VAPOR-DEPOSITION APPLICATIONS IN MICROELECTRONICS PROCESSING [J]. THIN SOLID FILMS, 1981, 83 (02) : 173 - 186

[5] CALCULATION OF STRESS IN ELECTRODEPOSITS FROM THE CURVATURE OF A PLATED STRIP [J]. JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS, 1949, 42 (02): : 105 - 123

[6] DEJONG T, 1983, THESIS U AMSTERDAM

[7] Ishizaka A., 1982, Molecular Beam Epitaxy and Clean Surface Techniques. Collected Papers of 2nd International Symposium, P183

[8] KASPER E, 1982, APPL PHYS A-MATER, V28, P129, DOI 10.1007/BF00617144

[9] ELASTIC STRAIN AND MISFIT DISLOCATION DENSITY IN SI0.92GE0.08 FILMS ON SILICON SUBSTRATES [J]. THIN SOLID FILMS, 1977, 44 (03) : 357 - 370

[10] KASPER E, 1984, ELECTROCHEMICAL SOC, P429