X-RAY-SCATTERING STUDIES OF THE SIO2/SI(001) INTERFACIAL STRUCTURE

被引：26
作者：
RABEDEAU, TA
TIDSWELL, IM
PERSHAN, PS
BEVK, J
FREER, BS
机构：
[1] HARVARD UNIV,DIV APPL SCI,CAMBRIDGE,MA 02138
[2] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源：
APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 06期
关键词：
D O I：
10.1063/1.105371
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
X-ray scattering has been utilized in a study of the SiO2/Si (001) interfacial structure. Scattering data provide evidence for a low coverage 2 X 1 epitaxial structure at the SiO2/Si interface for dry oxides grown on highly ordered Si surfaces at room temperature. The observed scattering is consistent with distorted dimer models of the interfacial structure. Thermal annealing substantially reduces the order of the 2 X 1 structure while prolonged exposure to humid air almost eliminates the 2 X 1 symmetry scattering. These findings suggest that the observed 2 X 1 order is associated with a metastable, intermediate state of the dry oxidation process.
引用
收藏
页码：706 / 708
页数：3
相关论文
共 19 条
  • [1] THEORY OF RECONSTRUCTION INDUCED SUBSURFACE STRAIN - APPLICATION TO SI(100)
    APPELBAUM, JA
    HAMANN, DR
    [J]. SURFACE SCIENCE, 1978, 74 (01) : 21 - 33
  • [2] STRUCTURE OF THE H-SATURATED SI(100) SURFACE
    BOLAND, JJ
    [J]. PHYSICAL REVIEW LETTERS, 1990, 65 (26) : 3325 - 3328
  • [3] X-RAY-SCATTERING STUDIES OF THE SI-SIO2 INTERFACE
    FUOSS, PH
    NORTON, LJ
    BRENNAN, S
    FISCHERCOLBRIE, A
    [J]. PHYSICAL REVIEW LETTERS, 1988, 60 (07) : 600 - 603
  • [4] ABSOLUTE X-RAY REFLECTIVITY STUDY OF THE AU(100) SURFACE
    GIBBS, D
    OCKO, BM
    ZEHNER, DM
    MOCHRIE, SGJ
    [J]. PHYSICAL REVIEW B, 1988, 38 (11): : 7303 - 7310
  • [5] OBSERVATION OF INTERFACIAL ATOMIC STEPS DURING SILICON OXIDATION
    GIBSON, JM
    LANZEROTTI, MY
    [J]. NATURE, 1989, 340 (6229) : 128 - 131
  • [6] ELECTRONIC-STRUCTURE OF DEFECTS AT SI-SIO2 INTERFACES
    HERMAN, F
    KASOWSKI, RV
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 395 - 401
  • [7] MICROSCOPIC STRUCTURE OF THE SIO2/SI INTERFACE
    HIMPSEL, FJ
    MCFEELY, FR
    TALEBIBRAHIMI, A
    YARMOFF, JA
    HOLLINGER, G
    [J]. PHYSICAL REVIEW B, 1988, 38 (09): : 6084 - 6096
  • [8] SIO2/SI INTERFACE STUDY WITH SYNCHROTRON RADIATION X-RAY-DIFFRACTION
    HIROSAWA, I
    AKIMOTO, K
    TATSUMI, T
    MIZUKI, J
    MATSUI, J
    [J]. JOURNAL OF CRYSTAL GROWTH, 1990, 103 (1-4) : 150 - 155
  • [9] ATOMIC AND ELECTRONIC-STRUCTURES OF OXYGEN ON SI(100) SURFACES - METASTABLE ADSORPTION SITES
    MIYAMOTO, Y
    OSHIYAMA, A
    [J]. PHYSICAL REVIEW B, 1990, 41 (18): : 12680 - 12686
  • [10] PHOTOEMISSION-STUDIES OF SI SURFACE OXIDATION USING SYNCHROTRON RADIATION
    NAKAZAWA, M
    SEKIYAMA, H
    [J]. APPLIED PHYSICS LETTERS, 1990, 56 (21) : 2108 - 2110
12