STRAIN RELIEF IN COMPOSITIONALLY GRADED INASXSB1-X BUFFER LAYERS AND INASXSB1-X/INSB STRAINED-LAYER SUPERLATTICES GROWN BY MOCVD

被引：57
作者：
BIEFELD, RM
HILLS, CR
LEE, SR
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1988年 / 91卷 / 04期
关键词：
D O I：
10.1016/0022-0248(88)90119-4
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：515 / 526
页数：12
相关论文
共 24 条
[1]   GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J].
BEAN, JC ;
FELDMAN, LC ;
FIORY, AT ;
NAKAHARA, S ;
ROBINSON, IK .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :436-440
[2]   THE PREPARATION OF MODULATION-DOPED GAAS/GAAS1-XPX STRAINED-LAYER SUPERLATTICES BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J].
BIEFELD, RM ;
FRITZ, IJ ;
DOYLE, BL .
JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (05) :335-340
[3]  
BIEFELD RM, 1986, J CRYST GROWTH, V77, P369
[4]   SUMMARY ABSTRACT - MOLECULAR-BEAM EPITAXIAL-GROWTH OF INASSB ALLOYS AND SUPERLATTICES [J].
DAWSON, LR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02) :598-599
[5]  
DECOOMAN BC, 1985, MATER RES SOC S P, V37, P239
[6]   RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW [J].
DODSON, BW ;
TSAO, JY .
APPLIED PHYSICS LETTERS, 1987, 51 (17) :1325-1327
[7]  
DODSON BW, IN PRESS APPL PHYS L
[8]   CRITICAL LAYER THICKNESS IN IN0.2GA0.8AS/GAAS SINGLE STRAINED QUANTUM-WELL STRUCTURES [J].
FRITZ, IJ ;
GOURLEY, PL ;
DAWSON, LR .
APPLIED PHYSICS LETTERS, 1987, 51 (13) :1004-1006
[9]   ROLE OF EXPERIMENTAL RESOLUTION IN MEASUREMENTS OF CRITICAL LAYER THICKNESS FOR STRAINED-LAYER EPITAXY [J].
FRITZ, IJ .
APPLIED PHYSICS LETTERS, 1987, 51 (14) :1080-1081
[10]   CATHODOLUMINESCENCE OF COMPOSITIONALLY GRADED LAYERS OF GAAS1-X PX [J].
KASANO, H ;
HOSOKI, S .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) :394-401
123