STRAIN RELIEF IN COMPOSITIONALLY GRADED INASXSB1-X BUFFER LAYERS AND INASXSB1-X/INSB STRAINED-LAYER SUPERLATTICES GROWN BY MOCVD

被引：57

作者：

BIEFELD, RM

HILLS, CR

LEE, SR

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 91卷 / 04期

关键词：

D O I：

10.1016/0022-0248(88)90119-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：515 / 526

页数：12

相关论文

共 24 条

[1] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY
BEAN, JC
FELDMAN, LC
FIORY, AT
NAKAHARA, S
ROBINSON, IK
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440
[2] THE PREPARATION OF MODULATION-DOPED GAAS/GAAS1-XPX STRAINED-LAYER SUPERLATTICES BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION
BIEFELD, RM
FRITZ, IJ
DOYLE, BL
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (05) : 335 - 340
[3] BIEFELD RM, 1986, J CRYST GROWTH, V77, P369
[4] SUMMARY ABSTRACT - MOLECULAR-BEAM EPITAXIAL-GROWTH OF INASSB ALLOYS AND SUPERLATTICES
DAWSON, LR
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02): : 598 - 599
[5] DECOOMAN BC, 1985, MATER RES SOC S P, V37, P239
[6] RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW
DODSON, BW
TSAO, JY
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (17) : 1325 - 1327
[7] DODSON BW, IN PRESS APPL PHYS L
[8] CRITICAL LAYER THICKNESS IN IN0.2GA0.8AS/GAAS SINGLE STRAINED QUANTUM-WELL STRUCTURES
FRITZ, IJ
GOURLEY, PL
DAWSON, LR
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (13) : 1004 - 1006
[9] ROLE OF EXPERIMENTAL RESOLUTION IN MEASUREMENTS OF CRITICAL LAYER THICKNESS FOR STRAINED-LAYER EPITAXY
FRITZ, IJ
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (14) : 1080 - 1081
[10] CATHODOLUMINESCENCE OF COMPOSITIONALLY GRADED LAYERS OF GAAS1-X PX
KASANO, H
HOSOKI, S
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) : 394 - 401