EFFECTS OF WHOLE INGOT ANNEALING ON 1.49 EV PL PROPERTIES IN LEC-GROWN SEMI-INSULATING GAAS

被引：10
|
作者：
YOKOGAWA, M
NISHINE, S
SASAKI, M
MATSUMOTO, K
FUJITA, K
AKAI, S
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1984年 / 23卷 / 05期
关键词：
D O I：
10.1143/JJAP.23.L339
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：L339 / L341
页数：3
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