EFFECTS OF WHOLE INGOT ANNEALING ON 1.49 EV PL PROPERTIES IN LEC-GROWN SEMI-INSULATING GAAS

被引：10
|
作者：
YOKOGAWA, M
NISHINE, S
SASAKI, M
MATSUMOTO, K
FUJITA, K
AKAI, S
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1984年 / 23卷 / 05期
关键词：
D O I：
10.1143/JJAP.23.L339
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L339 / L341
页数：3
相关论文
共 50 条
  • [31] PROPERTIES OF SEMI-INSULATING GAAS GROWN BY A VERTICAL MOLTEN ZONE METHOD
    TANG, RS
    SARGENT, L
    BLAKEMORE, JS
    SWIGGARD, EM
    JOURNAL OF APPLIED PHYSICS, 1990, 67 (02) : 852 - 858
  • [32] ASSESSMENT OF POST-ANNEALING UNIFORMITY OF SEMI-INSULATING CZOCHRALSKI-GROWN GAAS
    STIRLAND, DJ
    WARWICK, CA
    BROWN, GT
    SEMI-INSULATING III-V MATERIALS, MALMO 1988, 1988, : 93 - 98
  • [33] EFFECTS OF THERMAL HISTORY DURING LEC GROWTH ON BEHAVIOR OF EXCESS ARSENIC IN SEMI-INSULATING GAAS
    INADA, T
    OTOKI, Y
    OHATA, K
    TAHARASAKO, S
    KUMA, S
    JOURNAL OF CRYSTAL GROWTH, 1989, 96 (02) : 327 - 332
  • [34] PHOTOLUMINESCENCE STUDIES ON SEMI-INSULATING In-DOPED DISLOCATION-FREE GaAs GROWN BY LEC METHOD.
    Noto, Nobuhiko
    Kitagawara, Yutaka
    Takahashi, Tohru
    Takenaka, Takao
    1600, (25):
  • [35] Properties of semi-insulating GaAs:Fe grown by Hydride Vapour Phase Epitaxy
    Messmer, ER
    Söderstrom, D
    Hult, P
    Marcinkevicius, S
    Lourdudoss, S
    Look, DC
    STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXXI), 1999, 99 (17): : 15 - 19
  • [36] Properties of semi-insulating GaAs:Fe grown by hydride vapor phase epitaxy
    Messmer, ER
    Söderström, D
    Hult, P
    Marcinkevicius, S
    Lourdudoss, S
    Look, DC
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2000, 147 (08) : 3109 - 3110
  • [37] WHOLE-INGOT ANNEALED SEMI-INSULATING GaAs SUBSTRATES FOR LOW-NOISE MICROWAVE AMPLIFIERS.
    Kanber, Hilda
    Wang, D.C.
    Electron device letters, 1987, EDL-8 (06): : 263 - 265
  • [38] TEMPERATURE-DEPENDENCE OF FET PROPERTIES FOR CR-DOPED AND LEC SEMI-INSULATING GAAS SUBSTRATES
    HICKMOTT, TW
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (01) : 54 - 62
  • [39] INFLUENCE OF DISLOCATION DENSITY ON THE UNIFORMITY OF ELECTRICAL PROPERTIES OF Si IMPLANTED, SEMI-INSULATING LEC-GaAs.
    Honda, Takashi
    Ishii, Yasunobu
    Miyazawa, Shintaro
    Yamazaki, Hajime
    Nanishi, Yasushi
    Japanese Journal of Applied Physics, Part 2: Letters, 1983, 22 (05): : 270 - 272
  • [40] Uniformity and physical properties of semi-insulating Fe-doped InP after wafer or ingot annealing
    Avella, M
    Jimenez, J
    Alvarez, A
    Fornari, R
    Gilioli, E
    Sentiri, A
    JOURNAL OF APPLIED PHYSICS, 1997, 82 (08) : 3836 - 3845
12345