ANODIC SULFIDE FILMS ON HG1-XCDXTE

被引：54

作者：

NEMIROVSKY, Y

BURSTEIN, L

机构：

来源：

关键词：

D O I：

10.1063/1.94760

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：443 / 444

页数：2

共 11 条

[1]

[Anonymous], 1952, SOIL SCI

[2]

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[3]

CATAGNUS PC, 1976, Patent No. 3977018

[4]

KINCH M, 1981, SEMICONDUCTORS SEMIM, V18

[5] INTERFACE BETWEEN HG1-XCDXTE AND ITS NATIVE OXIDE [J].

NEMIROVSKY, Y ;

KIDRON, I .

[6] THE INTERFACE OF PLASMA-ANODIZED HG1-XCDXTE [J].

NEMIROVSKY, Y ;

GOSHEN, R ;

KIDRON, I .

[7] PLASMA ANODIZATION OF HG1-XCDXTE [J].

NEMIROVSKY, Y ;

GOSHEN, R .

[8] ANODIC OXIDE-FILMS ON HG1-XCDXTE [J].

NEMIROVSKY, Y ;

FINKMAN, E .

[9]

REINE MB, 1981, SEMICONDUCTORS SEMIM, V18

[10]

RICHTER HJ, 1981, SPRINGER TRACTS MODE