PURE SPACE-CHARGE-LIMITED ELECTRON CURRENT IN SILICON

被引:63
作者
DENDA, S
NICOLET, MA
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10.1063/1.1708829
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O59 [应用物理学];
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页码:2412 / &
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共 21 条
[1]   SPACE-CHARGE LIMITED HOLE CURRENT IN GERMANIUM [J].
DACEY, GC .
PHYSICAL REVIEW, 1953, 90 (05) :759-763
[2]  
DENDA S, 1965, 3733 JPL SPAC PROGR, V4, P57
[3]   EXPERIMENTAL INVESTIGATIONS OF SINGLE INJECTION IN COMPENSATED SILICON AT LOW TEMPERATURES [J].
GREGORY, BL ;
JORDAN, AG .
PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (5A) :1378-&
[4]   SINGLE-CARRIER INJECTION IN SILICON AT 76 DEGREES + 300 DEGREES K [J].
GREGORY, BL ;
JORDAN, AG .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (10) :3046-&
[5]  
Gurney R. W., 1940, ELECT PROCESSES IONI, P172
[6]   CONDUCTIVITY ANISOTROPY OF WARM AND HOT ELECTRONS IN SILICON AND GERMANIUM [J].
JORGENSEN, MH ;
MEYER, NI ;
SCHMIDTTIEDEMANN, KJ .
SOLID STATE COMMUNICATIONS, 1963, 1 (07) :226-233
[7]   VOLUME-CONTROLLED CURRENT INJECTION IN INSULATORS [J].
LAMPERT, MA .
REPORTS ON PROGRESS IN PHYSICS, 1964, 27 :329-367
[8]   THE BEHAVIOR OF P-DOPED AND N-DOPED CONTACTS IN A SPACE-CHARGE DEPLETION REGION [J].
LAVINE, JM .
SOLID-STATE ELECTRONICS, 1960, 1 (02) :107-122
[9]   SPACE-CHARGE-LIMITED CURRENTS IN SOLIDS FOR VARIOUS GEOMETRIES AND FIELD-DEPENDENT MOBILITY [J].
LEE, DH ;
NICOLET, MA .
SOLID-STATE ELECTRONICS, 1965, 8 (02) :182-&
[10]   DRIFT AND CONDUCTIVITY MOBILITY IN SILICON [J].
LUDWIG, GW ;
WATTERS, RL .
PHYSICAL REVIEW, 1956, 101 (06) :1699-1701