PURE SPACE-CHARGE-LIMITED ELECTRON CURRENT IN SILICON

[1] SPACE-CHARGE LIMITED HOLE CURRENT IN GERMANIUM [J]. PHYSICAL REVIEW, 1953, 90 (05): : 759 - 763

[2] DENDA S, 1965, 3733 JPL SPAC PROGR, V4, P57

[3] EXPERIMENTAL INVESTIGATIONS OF SINGLE INJECTION IN COMPENSATED SILICON AT LOW TEMPERATURES [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (5A): : 1378 - &

[4] SINGLE-CARRIER INJECTION IN SILICON AT 76 DEGREES + 300 DEGREES K [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (10) : 3046 - &

[5] Gurney R. W., 1940, ELECT PROCESSES IONI, P172

[6] CONDUCTIVITY ANISOTROPY OF WARM AND HOT ELECTRONS IN SILICON AND GERMANIUM [J]. SOLID STATE COMMUNICATIONS, 1963, 1 (07) : 226 - 233

[7] VOLUME-CONTROLLED CURRENT INJECTION IN INSULATORS [J]. REPORTS ON PROGRESS IN PHYSICS, 1964, 27 : 329 - 367

[8] THE BEHAVIOR OF P-DOPED AND N-DOPED CONTACTS IN A SPACE-CHARGE DEPLETION REGION [J]. SOLID-STATE ELECTRONICS, 1960, 1 (02) : 107 - 122

[9] SPACE-CHARGE-LIMITED CURRENTS IN SOLIDS FOR VARIOUS GEOMETRIES AND FIELD-DEPENDENT MOBILITY [J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 182 - &

[10] DRIFT AND CONDUCTIVITY MOBILITY IN SILICON [J]. PHYSICAL REVIEW, 1956, 101 (06): : 1699 - 1701

[1] SPACE-CHARGE LIMITED HOLE CURRENT IN GERMANIUM [J]. PHYSICAL REVIEW, 1953, 90 (05): : 759 - 763

[2] DENDA S, 1965, 3733 JPL SPAC PROGR, V4, P57

[3] EXPERIMENTAL INVESTIGATIONS OF SINGLE INJECTION IN COMPENSATED SILICON AT LOW TEMPERATURES [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (5A): : 1378 - &

[4] SINGLE-CARRIER INJECTION IN SILICON AT 76 DEGREES + 300 DEGREES K [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (10) : 3046 - &

[5] Gurney R. W., 1940, ELECT PROCESSES IONI, P172

[6] CONDUCTIVITY ANISOTROPY OF WARM AND HOT ELECTRONS IN SILICON AND GERMANIUM [J]. SOLID STATE COMMUNICATIONS, 1963, 1 (07) : 226 - 233

[7] VOLUME-CONTROLLED CURRENT INJECTION IN INSULATORS [J]. REPORTS ON PROGRESS IN PHYSICS, 1964, 27 : 329 - 367

[8] THE BEHAVIOR OF P-DOPED AND N-DOPED CONTACTS IN A SPACE-CHARGE DEPLETION REGION [J]. SOLID-STATE ELECTRONICS, 1960, 1 (02) : 107 - 122

[9] SPACE-CHARGE-LIMITED CURRENTS IN SOLIDS FOR VARIOUS GEOMETRIES AND FIELD-DEPENDENT MOBILITY [J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 182 - &

[10] DRIFT AND CONDUCTIVITY MOBILITY IN SILICON [J]. PHYSICAL REVIEW, 1956, 101 (06): : 1699 - 1701