ELECTRICAL AND STOICHIOMETRIC CHARACTERISTICS OF CDTE-FILMS DEPOSITED BY THE HOT-WALL FLASH-EVAPORATION TECHNIQUE

被引：10

作者：

FELIXVALDEZ, J ^{[1
]}

FALCONY, C ^{[1
]}

TUFINO, M ^{[1
]}

MENEZES, C ^{[1
]}

DOMINGUEZ, JM ^{[1
]}

GARCIA, A ^{[1
]}

机构：

[1] INST MEXICANO PETROLEO,MEXICO CITY 14,MEXICO

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 11期

关键词：

D O I：

10.1063/1.338957

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5076 / 5079

页数：4

共 10 条

[1] CADMIUM TELLURIDE FILMS AND SOLAR-CELLS [J].

BUBE, RH ;

FAHRENBRUCH, AL ;

SINCLAIR, R ;

ANTHONY, TC ;

FORTMANN, C ;

HUBER, W ;

LEE, CT ;

THORPE, T ;

YAMASHITA, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (05) :528-538

[2] VACUUM EVAPORATION OF CADMIUM TELLURIDE [J].

GLANG, R ;

KREN, JG ;

PATRICK, WJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) :407-412

[3]

Kazmerski L. L., 1980, POLYCRYSTALLINE AMOR

[4] GROWTH OF CDTE-FILMS ON SILICON BY MOLECULAR-BEAM EPITAXY [J].

LO, Y ;

BICKNELL, RN ;

MYERS, TH ;

SCHETZINA, JF ;

STADELMAIER, HH .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) :4238-4240

[5]

MENEZES C, 1985, J ELECTROCHEM SOC, V132, P708

[6] LOW RESISTIVITY CDTE-TE FILMS BY A COMBINED HOT-WALL-FLASH EVAPORATION TECHNIQUE [J].

MENEZES, CA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) :155-161

[7] PROPERTIES OF CDTE-TE ALLOY-FILMS PREPARED USING MOLECULAR-BEAMS [J].

MYERS, TH ;

WALTNER, AW ;

SCHETZINA, JF .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5697-5702

[8] EPITAXIAL-GROWTH OF CDTE BY A CLOSE-SPACED TECHNIQUE [J].

SARAIE, J ;

TANAKA, T ;

AKIYAMA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (11) :1758-&

[9] ZERO-BIAS RESISTANCE OF GRAIN-BOUNDARIES IN NEUTRON-TRANSMUTATION-DOPED POLYCRYSTALLINE SILICON [J].

SEAGER, CH ;

CASTNER, TG .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3879-3889

[10] ELECTRICAL PROPERTIES OF POLYCRYSTALLINE SILICON FILMS [J].

SETO, JYW .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) :5247-5254

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