LOW THRESHOLD VOLTAGE ZNSE-MN THIN-FILM ELECTROLUMINESCENT CELLS PREPARED BY MOLECULAR-BEAM DEPOSITION

被引：10

|

作者：

MISHIMA, T

TAKAHASHI, K

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 05期

关键词：

D O I：

10.1063/1.332392

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2153 / 2155

页数：3

相关论文

共 50 条

[1] LOW THRESHOLD VOLTAGE ZNSE-MN THIN-FILM ELECTROLUMINESCENT CELLS PREPARED BY MOLECULAR-BEAM GROWTH METHOD
MISHIMA, T
KONAGAI, M
TAKAHASHI, K
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (04) : 282 - 284
[2] MOLECULAR-BEAM EPITAXIAL ZNSE-MN DC ELECTROLUMINESCENT CELL WITH VERY LOW THRESHOLD VOLTAGE
MISHIMA, T
WANG, QK
TAKAHASHI, K
JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5797 - 5799
[3] EFFECTS OF INDIUM DIFFUSION ON THE PROPERTIES OF ZNSE-MN DC THIN-FILM ELECTROLUMINESCENT DEVICES
KOBAYASHI, M
MINO, N
KONAGAI, M
TAKAHASHI, K
JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 2905 - 2908
[4] MOLECULAR-BEAM THIN-FILM DEPOSITION
MUIRHEAD, IT
PHOTONICS SPECTRA, 1991, 25 (01) : 90 - &
[5] AC-ELECTROLUMINESCENCE IN THIN-FILM ZNSE-MN
SHAH, J
DIGIOVANNI, AE
APPLIED PHYSICS LETTERS, 1978, 33 (12) : 995 - 996
[6] LOW-VOLTAGE-DRIVEN AC THIN-FILM ELECTROLUMINESCENT CELL CONTAINING A ZNS-MN FILM DEPOSITED BY MOLECULAR-BEAM EPITAXY
OHTA, SI
TADOKORO, T
SATOU, S
YOKOYAMA, M
THIN SOLID FILMS, 1988, 162 (1-2) : 73 - 80
[7] LOW-THRESHOLD-VOLTAGE THIN-FILM ELECTROLUMINESCENT DEVICES
OKAMOTO, K
NASU, Y
HAMAKAWA, Y
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (06) : 698 - 702
[8] LOW-THRESHOLD-VOLTAGE THIN-FILM ELECTROLUMINESCENT DEVICES
OKAMOTO, K
NASU, Y
HAMAKAWA, Y
PROCEEDINGS OF THE SID, 1981, 22 (04): : 272 - 276
[9] THIN-FILM DEPOSITION OF BAO BY MOLECULAR-BEAM EPITAXY
MUTHE, KP
VYAS, JC
KOTHIYAL, GP
GANDHI, DP
DEBNATH, AK
GUPTA, SK
SABHARWAL, SC
GUPTA, MK
JOURNAL OF CRYSTAL GROWTH, 1992, 118 (1-2) : 213 - 217
[10] ZNSE-MN IN AC THIN-FILM ELECTRO-LUMINESCENCE DEVICES
MACH, R
VONKALBEN, J
GERICKE, W
MULLER, GO
REINSPERGER, GU
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 75 (02): : 489 - 494

← 1 2 3 4 5 →