BAND-GAP NARROWING IN N-SI AND N-GE - EFFECTS OF NON-LINEAR IMPURITY SCATTERING

被引:5
作者
ENGSTROM, L
机构
来源
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1983年 / 16卷 / 08期
关键词
D O I
10.1088/0022-3719/16/8/013
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:1437 / 1449
页数:13
相关论文
共 21 条
[1]   HEAVILY DOPED SEMICONDUCTORS AND DEVICES [J].
ABRAM, RA ;
REES, GJ ;
WILSON, BLH .
ADVANCES IN PHYSICS, 1978, 27 (06) :799-892
[2]   BAND-GAP NARROWING IN HEAVILY DOPED MANY-VALLEY SEMICONDUCTORS [J].
BERGGREN, KF ;
SERNELIUS, BE .
PHYSICAL REVIEW B, 1981, 24 (04) :1971-1986
[3]   PHASE-SHIFT ANALYSIS OF SCATTERING OF CARRIERS BY IONIZED IMPURITIES IN NON-DEGENERATE SEMICONDUCTORS [J].
BOARDMAN, AD ;
HENRY, DW .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1973, 60 (02) :633-639
[4]   ELECTRON-MOBILITY LIMITED BY IONIZED IMPURITY SCATTERING WITH NON-LINEAR SCREENING IN SEMICONDUCTORS [J].
CHATTOPADHYAY, D .
PHYSICAL REVIEW B, 1981, 23 (04) :1847-1850
[5]   THEORY OF SCREENING OF IMPURITY IONS IN SEMICONDUCTORS WITH SPATIALLY-VARIABLE DIELECTRIC-CONSTANTS [J].
CSAVINSZKY, P .
PHYSICAL REVIEW B, 1976, 14 (04) :1649-1659
[6]   PARTIAL-WAVE THEORY OF THE ELECTRICAL-RESISTIVITY OF HEAVILY-DOPED (DEGENERATE) UNCOMPENSATED N-TYPE SI AT LOW-TEMPERATURES [J].
CSAVINSZKY, P ;
BEAUPERTHUY, L ;
MORROW, RA .
PHYSICAL REVIEW B, 1981, 24 (06) :3602-3605
[7]  
DINGLE RB, 1955, PHILOS MAG, V46, P831
[8]  
Fetter A L, 1971, QUANTUM THEORY MANY
[9]  
Friedel J., 1958, NUOVO CIM, V7, P287, DOI DOI 10.1007/BF02751483
[10]   EFFECT OF ELECTRON INTERACTION ON BAND-GAP OF EXTRINSIC SEMICONDUCTORS [J].
INKSON, JC .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (07) :1177-1183