REVERSIBLE TRANSFORMATION OF DEFECTS IN HYDROGEN-IMPLANTED SILICON

被引：33
作者：
GORELKINSKII, Y
NEVINNYI, NN
机构：
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1983年 / 209卷 / MAY期
关键词：
D O I：
10.1016/0167-5087(83)90866-9
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
23
引用
收藏
页码：677 / 682
页数：6
相关论文
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