HOLE ACCUMULATION IN SIO2/SI3N4/SIO2 CAPACITORS PRIOR TO DIELECTRIC-BREAKDOWN

被引:2
|
作者
SAWACHI, M [1 ]
NISHIOKA, Y [1 ]
机构
[1] TEXAS INSTRUMENTS JAPAN,TSUKUBA RES & DEV CTR,TSUKUBA,IBARAKI 305,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 4A期
关键词
ONO; CAPACITORS; HOLE ACCUMULATION; ELECTRON TRAPPING; TDDB; C-V;
D O I
10.1143/JJAP.33.1820
中图分类号
O59 [应用物理学];
学科分类号
摘要
Supporting evidence for the time-dependent dielectric breakdown (TDDB) of an SiO2/Si3N4/SiO2 (ONO) capacitor due to hole accumulation has been obtained: 1) the gate current of the ONO capacitor during constant voltage stress continues to increase prior to dielectric breakdown, 2) after stress with a positive gate bias, the midgap voltage shifts toward the negative voltage direction, and 3) the time-to-breakdown is inversely proportional to the gate current. These suggest that holes injected from the anode accumulate in the vicinity of the Si3N4/SiO2 interface near the cathode, which cause the breakdown of ONO capacitors.
引用
收藏
页码:1820 / 1822
页数:3
相关论文
共 50 条
  • [21] A comparative study of the dielectric properties of Al/p-Si structures with 50 and 826 Å SiO2 interfacial layer
    Yildiz, D. E.
    Altindal, Semsettin
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2011, 13 (1-2): : 53 - 58
  • [22] Atomic diffusion and electrical reliability of NiAl/SiO2 interconnect: Breakdown voltage and TDDB characteristics
    Song, Kyeong-Youn
    Na, Seungjun
    Kim, Byoung-Joon
    Lee, Hoo-Jeong
    JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T, 2024, 30 : 7981 - 7987
  • [23] Structural and electrical characterization of SiO2/MgO(001) barriers on Si for a magnetic transistor
    Kohn, A.
    Kovacs, A.
    Uhrmann, T.
    Dimopoulos, T.
    Brueckl, H.
    APPLIED PHYSICS LETTERS, 2009, 95 (04)
  • [24] Control of preferential orientation of platinum films on RuO2/SiO2/Si substrates by sputtering
    Trinh, Bui Nguyen Quoc
    Horita, Susumu
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (11): : 8810 - 8816
  • [25] Effect of SiO2 addition on the dielectric properties and microstructure of BaTiO3-based ceramics in reducing sintering
    Lee, Ying-chieh
    Lu, Wei-hua
    Wang, Su-hei
    Lin, Chai-wei
    INTERNATIONAL JOURNAL OF MINERALS METALLURGY AND MATERIALS, 2009, 16 (01) : 124 - 127
  • [26] Trapping of majority carriers in SiO2/4H-SiC structures
    Palmieri, R.
    Radtke, C.
    Silva, M. R.
    Boudinov, H.
    da Silva, E. F., Jr.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 42 (12)
  • [27] SIMS analyses of SiO2/4H-SiC(0001) interface
    Yamashita, K
    Kitabatake, M
    Kusumoto, P
    Takahashi, K
    Uchida, M
    Miyanaga, R
    Itoh, H
    Yoshikawa, M
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 1037 - 1040
  • [28] Total dose radiation response of nitrided and non-nitrided SiO2/4H-SiC MOS capacitors
    Dixit, Sriram K.
    Dhar, Sarit
    Rozen, John
    Wang, Sanwu
    Schrimpf, Ronald D.
    Fleetwood, Daniel M.
    Pantelides, Sokrates T.
    Williams, John. R.
    Feldman, Leonard C.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2006, 53 (06) : 3687 - 3692
  • [29] Investigation of Progressive Breakdown and non-Weibull Failure Distribution of High-k and SiO2 Dielectric by Ramp Voltage Stress
    Rahim, Nilufa
    Wu, Ernest Y.
    Misra, Durgamadhab
    2011 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2011,
  • [30] Characterization of ferroelectricity in the Pt/YMnO3/SiO2/Si structure by C-V measurement
    Ryu, MK
    Lee, SH
    Ro, JH
    Kim, JP
    Joo, HJ
    Jang, MS
    FERROELECTRICS, 2002, 271 : 1801 - 1806