HOLE ACCUMULATION IN SIO2/SI3N4/SIO2 CAPACITORS PRIOR TO DIELECTRIC-BREAKDOWN

被引：2

作者：

SAWACHI, M ^{[1
]}

NISHIOKA, Y ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS JAPAN,TSUKUBA RES & DEV CTR,TSUKUBA,IBARAKI 305,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 4A期

关键词：

ONO; CAPACITORS; HOLE ACCUMULATION; ELECTRON TRAPPING; TDDB; C-V;

D O I：

10.1143/JJAP.33.1820

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Supporting evidence for the time-dependent dielectric breakdown (TDDB) of an SiO2/Si3N4/SiO2 (ONO) capacitor due to hole accumulation has been obtained: 1) the gate current of the ONO capacitor during constant voltage stress continues to increase prior to dielectric breakdown, 2) after stress with a positive gate bias, the midgap voltage shifts toward the negative voltage direction, and 3) the time-to-breakdown is inversely proportional to the gate current. These suggest that holes injected from the anode accumulate in the vicinity of the Si3N4/SiO2 interface near the cathode, which cause the breakdown of ONO capacitors.

引用

页码：1820 / 1822

页数：3

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