2ND HARMONIC CONVERSION IN CUBIC SILICON-CARBIDE AT 1.06-MU-M

被引：9

作者：

HARRIS, GL ^{[1
]}

JONES, EW ^{[1
]}

SPENCER, MG ^{[1
]}

JACKSON, KH ^{[1
]}

机构：

[1] HOWARD UNIV,DEPT ELECT ENGN,WASHINGTON,DC 20059

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 15期

关键词：

D O I：

10.1063/1.106208

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, we describe second harmonic conversion in cubic silicon carbide (beta-SiC) at a wavelength of 1.06-mu-m. Epitaxial layers of beta-SiC formed by vapor phase growth on silicon are indeed birefringent, and thus phase matchable. Phase matched films of beta-SiC have respectable conversion efficiencies even in the presence of adsorption at 532 nm. Our measured value of the effective second order nonlinear susceptibility for beta-SiC is chi(2)eff = 1.05 +/- 0.3 x 10(-9) esu.

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页码：1817 / 1819

页数：3

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