2ND HARMONIC CONVERSION IN CUBIC SILICON-CARBIDE AT 1.06-MU-M

被引：9
作者：
HARRIS, GL [1 ]
JONES, EW [1 ]
SPENCER, MG [1 ]
JACKSON, KH [1 ]
机构：
[1] HOWARD UNIV,DEPT ELECT ENGN,WASHINGTON,DC 20059
来源：
APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 15期
关键词：
D O I：
10.1063/1.106208
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this letter, we describe second harmonic conversion in cubic silicon carbide (beta-SiC) at a wavelength of 1.06-mu-m. Epitaxial layers of beta-SiC formed by vapor phase growth on silicon are indeed birefringent, and thus phase matchable. Phase matched films of beta-SiC have respectable conversion efficiencies even in the presence of adsorption at 532 nm. Our measured value of the effective second order nonlinear susceptibility for beta-SiC is chi(2)eff = 1.05 +/- 0.3 x 10(-9) esu.
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页码：1817 / 1819
页数：3
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