HIGH-PERFORMANCE THIN-FILM SILICON-ON-INSULATOR CMOS TRANSISTORS IN POROUS ANODIZED SILICON

被引：14
|
作者：
THOMAS, NJ
DAVIS, JR
KEEN, JM
CASTLEDINE, JG
BRUMHEAD, D
GOULDING, M
ALDERMAN, J
FARR, JPG
EARWAKER, LG
LECUYER, J
STIRLAND, IM
COLE, JM
机构：
[1] PLESSEY RES CASWELL LTD,TOWCESTER,NORTHANTS,ENGLAND
[2] ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND
[3] UNIV BIRMINGHAM,BIRMINGHAM B15 2TT,W MIDLANDS,ENGLAND
来源：
IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 03期
关键词：
D O I：
10.1109/55.31691
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：129 / 131
页数：3
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