IMPROVED PLANAR ISOLATION WITH BURIED-CHANNEL MOS FETS

被引：0

作者：

SUNAMI, H

KAWAMOTO, Y

SHIMOHIGASHI, K

HASHIMOTO, N

机构：

来源：

MICROELECTRONICS AND RELIABILITY | 1984年 / 24卷 / 03期

关键词：

D O I：

10.1016/0026-2714(84)90480-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：555 / 577

页数：23

共 11 条

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