SI LIQUID-AMORPHOUS TRANSITION AND IMPURITY SEGREGATION

被引：24

作者：

CAMPISANO, SU ^{[1
]}

JACOBSON, DC ^{[1
]}

POATE, JM ^{[1
]}

CULLIS, AG ^{[1
]}

CHEW, NG ^{[1
]}

机构：

[1] ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 09期

关键词：

D O I：

10.1063/1.95882

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：846 / 848

页数：3

共 11 条

[1]

[Anonymous], 1982, LASER ANNEALING SEMI

[2]

Baeri P., 1982, LASER ANNEALING SEMI

[3]

CAMPISANO SU, 1984, ENERGY BEAM SOLID IN, P89

[4] TRANSITIONS TO DEFECTIVE CRYSTAL AND THE AMORPHOUS STATE INDUCED IN ELEMENTAL SI BY LASER QUENCHING [J].

CULLIS, AG ;

WEBBER, HC ;

CHEW, NG ;

POATE, JM ;

BAERI, P .

PHYSICAL REVIEW LETTERS, 1982, 49 (03) :219-222

[5] ULTRARAPID CRYSTAL-GROWTH AND IMPURITY SEGREGATION IN AMORPHOUS-SILICON ANNEALED WITH SHORT Q-SWITCHED LASER-PULSES [J].

CULLIS, AG ;

WEBBER, HC ;

CHEW, NG .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :998-1000

[6] HEAT OF CRYSTALLIZATION AND MELTING-POINT OF AMORPHOUS-SILICON [J].

DONOVAN, EP ;

SPAEPEN, F ;

TURNBULL, D ;

POATE, JM ;

JACOBSON, DC .

APPLIED PHYSICS LETTERS, 1983, 42 (08) :698-700

[7]

Poate J. M., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P121

[8] SILICON MELT, REGROWTH, AND AMORPHIZATION VELOCITIES DURING PULSED LASER IRRADIATION [J].

THOMPSON, MO ;

MAYER, JW ;

CULLIS, AG ;

WEBBER, HC ;

CHEW, NG ;

POATE, JM ;

JACOBSON, DC .

PHYSICAL REVIEW LETTERS, 1983, 50 (12) :896-899

[9] MELTING TEMPERATURE AND EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS-SILICON DURING PULSED LASER IRRADIATION [J].

THOMPSON, MO ;

GALVIN, GJ ;

MAYER, JW ;

PEERCY, PS ;

POATE, JM ;

JACOBSON, DC ;

CULLIS, AG ;

CHEW, NG .

PHYSICAL REVIEW LETTERS, 1984, 52 (26) :2360-2363

[10] COMPUTER-SIMULATION OF HIGH-SPEED MELTING OF AMORPHOUS-SILICON [J].

WEBBER, HC ;

CULLIS, AG ;

CHEW, NG .

APPLIED PHYSICS LETTERS, 1983, 43 (07) :669-671

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