ZN1-YCDYSE1-XTEX QUATERNARY WIDE BAND-GAP ALLOYS - MOLECULAR-BEAM EPITAXIAL-GROWTH AND OPTICAL-PROPERTIES

被引:23
作者
BRASIL, MJSP
TAMARGO, MC
NAHORY, RE
GILCHRIST, HL
MARTIN, RJ
机构
[1] Bellcore, Red Bank, NJ 07701
关键词
D O I
10.1063/1.105504
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report the growth of Zn(1-y)Cd(y)Se(1-x)Te(x) alloys by molecular beam epitaxy on GaAs substrates. The optical properties and the band structure of this new material have been investigated. The compositional dependence of the quaternary band gap was studied using photoconductivity measurements and is well described by a third degree function of x and y. Photoluminescence spectra at low temperature show a single broad band, which narrows with increasing Te composition. We discuss the applicability of this new material for ZnSe/ZnCdSeTe heterostructures and predict a region of optimal band offsets for useful confinement of both electrons and holes.
引用
收藏
页码:1206 / 1208
页数:3
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