EPITAXIAL-GROWTH OF SI-GE LAYERS ON SI SUBSTRATES BY PLASMA DISSOCIATION OF SIH4 AND GEH4 MIXTURE

被引：17

作者：

SUZUKI, S

ITOH, T

机构：

来源：

关键词：

D O I：

10.1063/1.331915

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6385 / 6389

页数：5

共 16 条

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