ELECTRIC CHARACTERIZATION OF INDIUM SESQUISELENIDE SINGLE-CRYSTALS

Conductivity, Hall-effect measurements were performed on delta-phase In2Se3 single crystals, grown by the Bridgman method over the temperature range 150-428 K, in the directions perpendicular and parallel to the c-axis. The anisotropy of the electrical conductivity and of the Hall coefficient of n-type In2Se3 had been investigated. The values of the Hall coefficient and electrical conductivity at room temperature spreads from an order of R(H)11 = 1.36 x 10(4) cm3/coul, sigma-11 = 4.138 x 10(-3) OMEGA-1 cm-1 and R(H) = 66.55 x 10(4) cm3/coul, sigma = 0.799 x 10(-3) OMEGA-1 cm-1 for parallel and perpendicular to c-axis, respectively. The temperature dependence of Hall mobility and carrier concentration are also studied.