TWO-DIMENSIONAL NUMERICAL-SIMULATION OF FERMI-LEVEL PINNING PHENOMENA DUE TO DX CENTERS IN ALGAS/GAAS HEMTS

被引：34
作者：
MIZUTA, H
YAMAGUCHI, K
YAMANE, M
TANOUE, T
TAKAHASHI, S
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 10期
关键词：
D O I：
10.1109/16.40915
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：2307 / 2314
页数：8
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