ROLE OF LATTICE-DEFECTS IN EFFICIENCY OF IMPLANTATION DOPING OF CADMIUM TELLURIDE CRYSTALS

被引：0

作者：

ARKADEVA, EN

GUSEVA, MI

MATVEEV, OA

SLADKOVA, VA

机构：

[1] AF IOFFE ENGN PHYS INST,LENINGRAD,USSR

[2] IV KURCHATOV ATOM ENERGY INST,MOSCOW,USSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1975年 / 9卷 / 05期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：563 / 564

页数：2

共 14 条

[1] AGRINSKAYA NV, 1972, SOV PHYS SEMICOND+, V6, P407
[2] AGRINSKAYA NV, 1971, SOV PHYS SEMICOND+, V5, P767
[3] PHOSPHOROUS-ION-IMPLANTED CDS
ANDERSON, WW
MITCHELL, JT
[J]. APPLIED PHYSICS LETTERS, 1968, 12 (10) : 334 - &
[4] [Anonymous], 1973, SILICON PLANAR TRANS
[5] ARKADEVA EN, 1967, FIZ TVERD TELA+, V8, P2260
[6] TYPE CONVERSION AND P-N JUNCTIONS IN N-CDTE PRODUCED BY ION IMPLANTATION
DONNELLY, JP
FOYT, AG
HINKLEY, ED
LINDLEY, WT
DIMMOCK, JO
[J]. APPLIED PHYSICS LETTERS, 1968, 12 (09) : 303 - &
[7] GUSEV VM, 1969, PRIB TEKH EKSP, P19
[8] DIFFUSION AND SOLUBILITY OF PHOSPHORUS IN CDTE AND CDSE
HALL, RB
WOODBURY, HH
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) : 5361 - &
[9] ZINC ION-IMPLANTATION OF SULFUR-DOPED GAP
HEMENGER, PM
DOBBS, BC
[J]. APPLIED PHYSICS LETTERS, 1973, 23 (08) : 462 - 464
[10] TYPE CONVERSION AND P-N JUNCTION FORMATION IN ION-IMPLANTED ZNTE
HOU, SL
BECK, K
MARLEY, JA
[J]. APPLIED PHYSICS LETTERS, 1969, 14 (05) : 151 - &