THE HETEROEPITAXY OF GE ON SI A COMPARISON OF CHEMICAL VAPOR AND VACUUM-DEPOSITED LAYERS

被引：0
作者：
MAENPAA, M
KUECH, TF
NICOLET, MA
LAU, SS
SADANA, DK
机构：
[1] CALTECH,PASADENA,CA 91125
[2] UNIV CALIF SAN DIEGO,LA JOLLA,CA 92093
[3] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,BERKELEY,CA 94720
来源：
JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 02期
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中图分类号：
O59 [应用物理学];
学科分类号：
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页码：1076 / 1083
页数：8
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