STATIC-NOISE MARGIN ANALYSIS OF MOS SRAM CELLS

被引：895
作者：
SEEVINCK, E
LIST, FJ
LOHSTROH, J
机构：
[1] Philips Research Lab, Eindhoven, Neth, Philips Research Lab, Eindhoven, Neth
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1987年 / 22卷 / 05期
关键词：
DATA STORAGE; DIGITAL - Random Access - SEMICONDUCTOR DEVICES; MOS;
D O I：
10.1109/JSSC.1987.1052809
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The stability of both resistor-load (R-load) and full-CMOS SRAM cells is investigated analytically as well as by simulation. Explicit analytic expressions for the static-noise margin (SNM) is a function of device parameters and supply voltage are derived. The expressions are useful in predicting the effect of parameter changes on the stability as well as in optimizing the design of SRAM cells. An easy-to-use SNM simulation method is presented, the results of which are in good agreement with the results predicted by the analytic SNM expressions. It is further concluded that full-CMOS cells are much more stable than R-load cells at a low supply voltage.
引用
收藏
页码：748 / 754
页数：7
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