ULTRAFAST GAIN-SWITCHING DYNAMICS IN 1.5 MU-M DYNAMICAL SINGLE-MODE SEMICONDUCTOR-LASERS - 50-130 GHZ HIGH-FREQUENCY SELF-PULSATIONS

被引：6

作者：

WANG, J ^{[1
]}

SCHWEIZER, H ^{[1
]}

KOVAC, J ^{[1
]}

KADEN, C ^{[1
]}

机构：

[1] ALCATEL SEL RES CTR,STUTTGART,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 22期

关键词：

D O I：

10.1063/1.114883

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter generation of up to 130 GHz high frequency self-pulsation in ultrafast gain-switched InGaAs/InGaAsP dynamical single-mode lasers with monolithically integrated external cavities is reported. With various active cavity lengths and external cavity lengths, the dependence of the pulsation frequency on the length of the respective cavity is shown and analyzed in detail for a pulsation frequency range from 50 to 130 GHz. Theoretically, by treating the external cavity as a gain-switched laser amplifier and taking into account the coherent time-dependent amplification, shortening and reflection of an incident picosecond optical pulse in the gain-switched amplifier, we can well understand and simulate the observed high frequency self-pulsations. (C) 1995 American Institute of Physics.

引用

页码：3236 / 3238

页数：3

共 15 条

[1]

[Anonymous], UNPUB

[2]

ARAHIRA S, 1994, APPL PHYS LETT, V19, P834

[3]

BOTTCHER EH, 1988, J APPL PHYS, V63, P2469, DOI 10.1063/1.341025

[4] ACTIVELY MODE-LOCKED SEMICONDUCTOR-LASERS [J].