CONTACT ANGLES IN THE LIQUID-PHASE EPITAXY OF INP, GAINAS AND GAINASP

被引：10
作者：
KONIG, U
KECK, W
KRIKS, A
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1984年 / 68卷 / 02期
关键词：
D O I：
10.1016/0022-0248(84)90462-7
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：545 / 549
页数：5
相关论文
共 8 条
[1]   N+-INP GROWTH ON INGAAS BY LIQUID-PHASE EPITAXY [J].
GROVES, SH ;
PLONKO, MC .
APPLIED PHYSICS LETTERS, 1981, 38 (12) :1003-1004
[2]  
HSIEH JJ, 1981, IEEE J QUANTUM ELECT, V17, P118, DOI 10.1109/JQE.1981.1071083
[3]   MEASUREMENT OF THE SURFACE-TENSION OF GALLIUM AND INDIUM IN A HYDROGEN ATMOSPHERE BY THE SESSILE DROP METHOD [J].
KONIG, U ;
KECK, W .
JOURNAL OF THE LESS-COMMON METALS, 1983, 90 (02) :299-303
[4]   CONTACT ANGLES BETWEEN III-V MELTS AND SEVERAL SUBSTRATES [J].
KONIG, U ;
KECK, W .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) :685-686
[5]   POLARITY DEPENDENCE OF CONTACT ANGLES BETWEEN LIQUID GALLIUM AND [111] SURFACES OF GAAS [J].
LIEBERT, BE ;
MUNIR, ZA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) :368-&
[6]  
Mykura H., 1966, SOLID SURFACES INTER
[7]   CONTACT ANGLES BETWEEN (GAAL)AS SOLID AND SOLUTIONS [J].
POTEMSKI, RM ;
SMALL, MB .
JOURNAL OF CRYSTAL GROWTH, 1983, 62 (02) :317-319
[8]  
SCHLOSSER E, UNPUB
1