RESONANT TUNNELING OF HOLES IN ALAS GAAS TRIPLE BARRIER DIODES

被引：15

作者：

NAKAGAWA, T

FUJITA, T

MATSUMOTO, Y

KOJIMA, T

OHTA, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 15期

关键词：

D O I：

10.1063/1.98003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：974 / 976

页数：3

共 10 条

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ANDO, T .

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[3] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J].

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ESAKI, L ;

TSU, R .

APPLIED PHYSICS LETTERS, 1974, 24 (12) :593-595

[4] RESONANT TUNNELING OF HOLES IN ALAS-GAAS-ALAS HETEROSTRUCTURES [J].

MENDEZ, EE ;

WANG, WI ;

RICCO, B ;

ESAKI, L .

APPLIED PHYSICS LETTERS, 1985, 47 (04) :415-417

[5] OBSERVATION OF RESONANT TUNNELING IN ALGAAS/GAAS TRIPLE BARRIER DIODES [J].

NAKAGAWA, T ;

IMAMOTO, H ;

KOJIMA, T ;

OHTA, K .

APPLIED PHYSICS LETTERS, 1986, 49 (02) :73-75

[6] OBSERVATION OF RESONANT TUNNELING VIA 1ST EXCITED-LEVEL IN DOUBLE-BARRIER DIODES [J].

NAKAGAWA, T ;

IMAMOTO, H ;

KAWAI, NJ ;

KOJIMA, T ;

OHTA, K .

ELECTRONICS LETTERS, 1986, 22 (08) :406-407

[7] PHASE-LOCKED EPITAXY USING RHEED INTENSITY OSCILLATION [J].

SAKAMOTO, T ;

FUNABASHI, H ;

OHTA, K ;

NAKAGAWA, T ;

KAWAI, NJ ;

KOJIMA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (09) :L657-L659

[8]

SCHEWCHUK TJ, 1985, APPL PHYS LETT, V46, P508

[9] RESONANT TUNNELING THROUGH QUANTUM WELLS AT FREQUENCIES UP TO 2.5 THZ [J].

SOLLNER, TCLG ;

GOODHUE, WD ;

TANNENWALD, PE ;

PARKER, CD ;

PECK, DD .

APPLIED PHYSICS LETTERS, 1983, 43 (06) :588-590

[10] RESONANT TUNNELING OF HOLES IN QUANTUM WELL HETEROSTRUCTURES [J].

WANG, WI ;

MENDEZ, EE ;

RICCO, B ;

ESAKI, L .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :1149-1150

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