LOW-NOISE MESFETS FOR ION-IMPLANTED GAAS MMICS

被引：2

作者：

GUPTA, AK

SIU, DP

IP, KT

PETERSEN, WC

机构：

[1] Rockwell Int, Microelectronics, Research & Development Cent,, Thousand Oaks, CA, USA, Rockwell Int, Microelectronics Research & Development Cent, Thousand Oaks, CA, USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1983年 / 31卷 / 12期

关键词：

INTEGRATED CIRCUITS; MONOLITHIC - Microwaves - SEMICONDUCTING GALLIUM ARSENIDE - Ion Implantation;

D O I：

10.1109/TMTT.1983.1131664

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Fabrication considerations for low-noise FETs in ion-implanted GaAs monolithic microwave integrated circuits (MMICs) are presented. Processes that can deteriorate FET performance have been identified and some solutions proposed. Low-noise MMIC FETs fabricated along these lines show good microwave performance through 18 GHz, approaching the performance available from similar discrete FETs. 0. 8- mu m gate-length MMIC FETs with a noise figure of 2. 9 db and associated gain of 6. 1 db at 18 GHz have been fabricated. These devices are suitable for low-noise applications in ion-implanted GaAs MMICs.

引用

页码：1072 / 1076

页数：5