LOW-NOISE MESFETS FOR ION-IMPLANTED GAAS MMICS

被引：2
|
作者：
GUPTA, AK
SIU, DP
IP, KT
PETERSEN, WC
机构：
[1] Rockwell Int, Microelectronics, Research & Development Cent,, Thousand Oaks, CA, USA, Rockwell Int, Microelectronics Research & Development Cent, Thousand Oaks, CA, USA
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1983年 / 31卷 / 12期
关键词：
INTEGRATED CIRCUITS; MONOLITHIC - Microwaves - SEMICONDUCTING GALLIUM ARSENIDE - Ion Implantation;
D O I：
10.1109/TMTT.1983.1131664
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Fabrication considerations for low-noise FETs in ion-implanted GaAs monolithic microwave integrated circuits (MMICs) are presented. Processes that can deteriorate FET performance have been identified and some solutions proposed. Low-noise MMIC FETs fabricated along these lines show good microwave performance through 18 GHz, approaching the performance available from similar discrete FETs. 0. 8- mu m gate-length MMIC FETs with a noise figure of 2. 9 db and associated gain of 6. 1 db at 18 GHz have been fabricated. These devices are suitable for low-noise applications in ion-implanted GaAs MMICs.
引用
收藏
页码：1072 / 1076
页数：5
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