GROWTH AND CHARACTERIZATION OF GAN ON C-PLANE (0001) SAPPHIRE SUBSTRATES BY PLASMA-ENHANCED MOLECULAR-BEAM EPITAXY

被引：45

作者：

LIN, ME ^{[1
]}

SVERDLOV, BN ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 08期

关键词：

D O I：

10.1063/1.354285

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaN films were grown on the c-plane of sapphire substrates by plasma-enhanced molecular beam epitaxy equipped with an electron-cyclotron resonance (ECR) source. Sapphire substrates were cleaned by a hydrogen plasma treatment, obviating the need for perilous elevated temperatures. ECR sources are plagued with high energetic ions, particularly at high microwave power levels, where they cause damage in the growing films. To circumvent this problem, we systematically optimized the growth conditions and other pertinent parameters for optimum layer quality. Among the parameters optimized were the magnetic field strength, microwave power, nitrogen over-pressure, and growth temperature. The quality of the GaN layers were evaluated by electrical and structural measurements as well as observing the surface morphology.

引用

页码：5038 / 5041

页数：4

共 10 条

[1] P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI) [J].

AMANO, H ;

KITO, M ;

HIRAMATSU, K ;

AKASAKI, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12) :L2112-L2114

[2] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER [J].

AMANO, H ;

SAWAKI, N ;

AKASAKI, I ;

TOYODA, Y .

APPLIED PHYSICS LETTERS, 1986, 48 (05) :353-355

[3] GAN GROWN ON HYDROGEN PLASMA CLEANED 6H-SIC SUBSTRATES [J].

LIN, ME ;

STRITE, S ;

AGARWAL, A ;

SALVADOR, A ;

ZHOU, GL ;

TERAGUCHI, N ;

ROCKETT, A ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1993, 62 (07) :702-704

[4]

LIN MJ, UNPUB

[5]

MAYER RL, COMMUNICATION

[6] ELECTRON-TRANSPORT MECHANISM IN GALLIUM NITRIDE [J].

MOLNAR, RJ ;

LEI, T ;

MOUSTAKAS, TD .

APPLIED PHYSICS LETTERS, 1993, 62 (01) :72-74

[7] INSITU MONITORING AND HALL MEASUREMENTS OF GAN GROWN WITH GAN BUFFER LAYERS [J].

NAKAMURA, S ;

MUKAI, T ;

SENOH, M .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (11) :5543-5549

[8] HIGH-POWER GAN P-N-JUNCTION BLUE-LIGHT-EMITTING DIODES [J].

NAKAMURA, S ;

MUKAI, T ;

SENOH, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (12A) :L1998-L2001

[9] GAN GROWTH USING GAN BUFFER LAYER [J].

NAKAMURA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (10A) :L1705-L1707

[10] GAN, AIN, AND INN - A REVIEW [J].

STRITE, S ;

MORKOC, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04) :1237-1266

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