SELF-TRAPPED HOLES IN AMORPHOUS-SILICON DIOXIDE

被引:177
作者
GRISCOM, DL
机构
来源
PHYSICAL REVIEW B | 1989年 / 40卷 / 06期
关键词
D O I
10.1103/PhysRevB.40.4224
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
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页码:4224 / 4227
页数:4
相关论文
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