DEGRADATION OF POLY(METHYL METHACRYLATE) IN CF4 AND CF4/O2 PLASMAS

被引:17
|
作者
WU, BJ [1 ]
HESS, DW [1 ]
SOONG, DS [1 ]
BELL, AT [1 ]
机构
[1] UNIV CALIF BERKELEY,DEPT CHEM ENGN,BERKELEY,CA 94720
关键词
D O I
10.1063/1.332224
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1725 / 1729
页数:5
相关论文
共 50 条
  • [31] PLASMA-ETCHING OF NIOBIUM WITH CF4/O2 GASES
    CHEN, MM
    WANG, RH
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 708 - 711
  • [32] ETCH ANISOTROPY OF UNDOPED POLYSILICON FILMS IN CF4/O2
    FAVREAU, D
    CHEN, MM
    CHOW, M
    LEE, YH
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (08) : C309 - C309
  • [33] Uranium dioxide reaction in CF4/O2 RF plasma
    Kim, Yong-Soo
    Min, Jin-Young
    Bae, Ki-Kwang
    Yang, Myung-Seung
    Journal of Nuclear Materials, 1999, 270 (01): : 253 - 258
  • [34] Comparison of models for silicon etching in CF4 + O2 plasma
    Knizikevicius, R.
    VACUUM, 2012, 86 (12) : 1964 - 1968
  • [36] Uranium dioxide reaction in CF4/O2 RF plasma
    Kim, YS
    Min, JY
    Bae, KK
    Yang, MS
    JOURNAL OF NUCLEAR MATERIALS, 1999, 270 (1-2) : 253 - 258
  • [37] SURFACE PROCESSES IN CF4/O2 REACTIVE ETCHING OF SILICON
    OEHRLEIN, GS
    ROBEY, SW
    LINDSTROM, JL
    APPLIED PHYSICS LETTERS, 1988, 52 (14) : 1170 - 1172
  • [38] Dry etching characteristics of Pb(ZrTi)O3 films in CF4 and Cl2/CF4 inductively coupled plasmas
    Jung, JK
    Lee, WJ
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (3A): : 1408 - 1419
  • [39] 2-d imaging of temperature in CF4 plasmas
    Steffens, KL
    Sobolewski, MA
    IEEE TRANSACTIONS ON PLASMA SCIENCE, 2005, 33 (02) : 370 - 371
  • [40] CHARACTERIZATION OF PLASMA-ETCHING OF MOLYBDENUM POLYCID CONDUCTOR STACKS IN CL2/CF4 AND CL2/CF4/O2
    HANDKE, R
    LIPPERT, G
    CRYSTAL RESEARCH AND TECHNOLOGY, 1988, 23 (05) : 705 - 712