QUANTUM-THEORY OF THE COMPLEX DIELECTRIC-CONSTANT OF FREE-CARRIERS IN POLAR SEMICONDUCTORS

被引:36
作者
JENSEN, B
机构
关键词
D O I
10.1109/JQE.1982.1071713
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1361 / 1370
页数:10
相关论文
共 31 条
[2]  
COLLIN RE, 1966, F MICROWAVE ENG, P76
[3]   FREE-CARRIER ABSORPTION IN N-TYPE INDIUM ARSENIDE [J].
CULPEPPE.RM ;
DIXON, JR .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1968, 58 (01) :96-&
[4]   INTRABAND AND INTERBAND FREE-CARRIER ABSORPTION AND FUNDAMENTAL ABSORPTION EDGE IN N-TYPE INP [J].
DUMKE, WP ;
LORENZ, MR ;
PETTIT, GD .
PHYSICAL REVIEW B, 1970, 1 (12) :4668-&
[5]   QUANTUM THEORY OF FREE CARRIER ABSORPTION [J].
DUMKE, WP .
PHYSICAL REVIEW, 1961, 124 (06) :1813-&
[6]   FREE-CARRIER ABSORPTION OF NORMAL-TYPE ZNSE-AL [J].
DUTT, BV ;
KIM, OK ;
SPITZER, WG .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (05) :2110-2111
[7]   POINT-DEFECTS, LOCALIZED VIBRATIONAL MODES, AND FREE-CARRIER ABSORPTION OF AL-DOPED CDTE [J].
DUTT, BV ;
ALDELAIMI, M ;
SPITZER, WG .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) :565-572
[8]  
FUJITA S, 1966, NONEQUILIBRIUM QUANT, P123
[9]   THE BOLTZMANN EQUATION IN THE THEORY OF ELECTRICAL CONDUCTION IN METALS [J].
GREENWOOD, DA .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 71 (460) :585-596
[10]   FREE-CARRIER INFRARED ABSORPTION IN 3-V SEMICONDUCTORS 3. GAAS INP GAP + GASB [J].
HAGA, E ;
KIMURA, H .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (05) :658-&