INFLUENCE OF LONGITUDINAL AND LATERAL CONFINEMENTS ON EXCITONS IN CYLINDRICAL QUANTUM DOTS OF SEMICONDUCTORS

被引：127

作者：

LEGOFF, S ^{[1
]}

STEBE, B ^{[1
]}

机构：

[1] ECOLE SUPER ELECT, OPTOELECTRON & MICROELECTRON LAB, F-57078 METZ 3, FRANCE

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.47.1383

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The ground-state energy of an exciton in a cylindrical quantum dot with finite potential barriers is calculated by the variation method within the envelope-function approximation. The computations are performed in the cases of infinite and finite band offsets. The limit of a strictly two-dimensional quantum disk is discussed. Our numerical results are particularized to the GaAs/Ga1-xAlxAs system with 0.10 less-than-or-equal-to x less-than-or-equal-to 0.30. In this case, the effect of the quantum confinement is the highest for dot dimensions near 50 angstrom.

引用

页码：1383 / 1391

页数：9

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