LINEWIDTH BROADENING FACTOR OF A MICROCAVITY SEMICONDUCTOR-LASER

被引：23

作者：

JIN, R

BOGGAVARAPU, D

KHITROVA, G

GIBBS, HM

HU, YZ

KOCH, SW

PEYGHAMBARIAN, N

机构：

[1] Optical Sciences Center, University of Arizona, Tucson

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 16期

关键词：

D O I：

10.1063/1.108377

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The emission linewidth above threshold is measured in a GaAs/AlGaAs microcavity surface-emitting laser with a single cavity mode. The measured linewidth broadening factor is in good agreement with theoretical calculations that include the most important many-body Coulomb effects of the electron-hole plasma.

引用

页码：1883 / 1885

页数：3

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